Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T11:50:24.026Z Has data issue: false hasContentIssue false
  • English
  • Français

Cathodoluminescence Studies of Thermal Stress in Patterned GaAs/Si

Published online by Cambridge University Press:  25 February 2011

E. H. Lingunis ,
N. M. Haegel  and
N. H. Karam
E. H. Lingunis
Affiliation:
Dept. of Materials Science & Engineering, Univ. of California, Los Angeles, CA 90024
N. M. Haegel
Affiliation:
Dept. of Materials Science & Engineering, Univ. of California, Los Angeles, CA 90024
N. H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
Get access

Abstract

Thermal stress distributions in patterned GaAs/Si are studied by low temperature cathodoluminescence spectroscopy. The MOCVD-grown samples have ben patterned in the form of stripes either by selective etching or by selective GaAs/Si growth using a SiO2 mask. In this work, the relevant stress components are determined as functions of position for stripes with different width to thickness ratios from low temperature (10 K) GaAs cathodoluminescence spectra and the results are discussed in comparison with finite element elastic calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 351
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yacobi, B.G., Zemon, S., Norris, P., Jagannath, C. and Sheldon, P., Appl. Phys. Lett. 51(26), 2236 (1987).Google Scholar
2. Yacobi, B.G., Jagannath, C., Zemon, S. and Sheldon, P., Appl. Phys. Lett. 52(7), 555 (1988).Google Scholar
3. van der Ziel, J.P., Chand, N. and Weiner, J.S., J. Appl. Phys. 66(3), 1195 (1989).Google Scholar
4. Rich, D.H., Ksendzov, A., Terhune, R.W., Grunthaner, F.J., Wilson, B.A., Shen, H., Dutta, M., Vernon, S.M. and Dixon, T.M., Phys. Rev. B 43(8), 6836 (1991).Google Scholar
5. Lingunis, E.H., Haegel, N.M. and Karam, N.H., Appl. Phys. Lett. 59(26), 3428 (1991).Google Scholar
6. Ohashi, T. and Honda, N. in “Mechanical Behavior of Materials and Structures in Microelectronics,” ed. Suhir, E., Cammarata, R.C. and Chung, D.D.L., Mat. Res. Soc. Symp. Proc. 226, 147 (1991).Google Scholar
7. Lingunis, E.H., Haegel, N.M. and Karam, N.H., Solid State Comm. 76(3), 303 (1990).Google Scholar