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Catalytic Forming Gas Anneal on III-V/Ge MOS Systems

Published online by Cambridge University Press:  31 January 2011

Wei-E Wang ,
Han-Chung Lin ,
Guy Brammertz ,
Annelies Delabie ,
eddy simoen ,
Matty Caymax ,
Marc Meuris  and
Marc Heyns
Wei-E Wang
Affiliation:
weie.wang@intel.com
Han-Chung Lin
Affiliation:
dlin@imec.be, IMEC, Leuven, Belgium
Guy Brammertz
Affiliation:
Guy.Brammertz@imec.be, IMEC, leuven, Belgium
Annelies Delabie
Affiliation:
delabiea@imec.be, IMEC, leuven, Belgium
eddy simoen
Affiliation:
simoen@imec.be, IMEC, leuven, Belgium
Matty Caymax
Affiliation:
Matty.Caymax@imec.be, IMEC, leuven, Belgium
Marc Meuris
Affiliation:
Marc.Meuris@imec.be, IMEC, leuven, Belgium
Marc Heyns
Affiliation:
Heyns@imec.be, IMEC, leuven, Belgium
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Abstract

Catalytic-FGA, a combination of the standard forming gas anneal with a catalytic metal gate, has been applied to study the hydrogen passivation of III-V/Ge MOS systems. Pd (or Pt) metal gate catalytically dissociates molecular hydrogen into atomic hydrogen atoms, which then diffuse through the dielectric layer and neutralize certain semiconductor/dielectric interfacial defects. MOS systems with various interfacial qualities, including lattice-matched (n/p) In0.53Ga0.47As/10nm ALD-Al2O3 (or ZrO2)/Pd capacitors, an undoped Ge/˜1nm GeO2/4nm ALD-Al2O3/Pt capacitor, and an nGe/8nm ALD-Al2O3/Pt capacitor are fabricated to evaluate the effectiveness of C-FGA.

Keywords

GeIII-Vannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A07-06
Copyright
Copyright © Materials Research Society 2010

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