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Carrier Transport in Compositionally Modulated a-Si:H Based Superlattice Structures

Published online by Cambridge University Press:  26 February 2011

C. R. Wronski ,
P. D. Persans  and
B. Abeles
C. R. Wronski
Affiliation:
Center for Electronic Materials and DevicesThe Pennsylvania State University, University Park, PA 16802
P. D. Persans
Affiliation:
Physics Department, Reussklaer Polytechnic Institute, Troy, NY 1281
B. Abeles
Affiliation:
Exxon Research and Engineering, Route 22 E, Annaudale, N.J. 08801
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Abstract

Results are presented on the electron transport, parallel and perpendicular to the layers, in a Ge:H/a-Si:H superlattices. The dependence of this carrier transport on the optical gap shifts, the heterojunction band alignment, as well as the bulk properties and thickness of the Ge,Si layers is established. No significant change in the transport mechanisms at the band edge or Ge with dr was detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 381
Copyright
Copyright © Materials Research Society 1987

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References

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