Hostname: page-component-848d4c4894-8bljj Total loading time: 0 Render date: 2024-06-30T00:47:57.347Z Has data issue: false hasContentIssue false
  • English
  • Français

Carrier Profile Variation of a Channel Conductive Layer Through Phospho-Silicate-Glass Cap Annealing of N+ Si-Implanted GaAs Crystals

Published online by Cambridge University Press:  03 September 2012

Yasuyuki Saito
Yasuyuki Saito*
Affiliation:
Toshiba Corporation, Microelectronics Center Tamagawa Works, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan.
Get access

Abstract

This paper reports the variation of carrier concentration depth profile in Si-implanted channel conductive layers of liquid- encapsulated-Czochralski- technique (LEC) grown GaAs crystals, the Vth scattering amplitude variation and the averaged Vth variation before and after phospho-silicate-glass (PSG) cap annealing of high-dose-Si-ion implanted crystal layers. Furthermore, the PSG-cap-annealing Vth variation difference between the As-rich LEC crystal and the near-stoichiometric LEC crystal is presented. These results, and carrier depth profile of Si-implanted active layers in LEC GaAs crystals through model of implanted Si atom move (like diffusion) and Si atom capture of a crystal lattice and siteing on lattice are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 719
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Saito, Yasuyuki, R&D report RM27483 (1987).Google Scholar
2. Saito, Yasuyuki, J. Appl. Phys. 71, 3544 (1992).Google Scholar
3. Saito, Yasuyuki, unpublished (1984).Google Scholar
4. Yoshida, Hiroshi, Ishida, Kenji and Mochizuki, Masao, pp. 22–26 (unpublished).Google Scholar
5. Saito, Yasuyuki, in Extended Abstracts (The 39th Spring Meeting, 1992); The Jpn. Soc. Appl. Phys. and Related Socoeties., 30p-S-13, pp. 1163. Cat. Num. AP-921108–03.Google Scholar
6. Otsuki, T.. J. Appl. Phys. 61, 928 (1987).Google Scholar
7. Saito, Y., Fukuda, K., Nozaki, C., Yasuami, S., Nishio, J., Yashiro, S., Washizuka, S., Watanabe, M., Hirose, M., Kitaura, Y. and Uchitomi, N., Jpn. J. Appl. Phys. 30, 2432 (1991).CrossRefGoogle Scholar
8. Saito, Yasuyuki, submitted to The 10th International Conference on Crystal Growth as a proceedings.Google Scholar
9. Jordan, A. S., Caruso, R., and von Neida, A. R., Bell System Technical Journal 59, 593 (1980).CrossRefGoogle Scholar
10. Saito, Yasuyuki. J. Appl. Phys. 68. 830 (1990).Google Scholar
11. Saito, Yasuyuki, unpublished (1982).Google Scholar
12. Saito, Yasuyuki, submitted to The 10th International Conference on Crystal Growth as a proceedings.Google Scholar
13. Saito, Yasuyuki and Nishio, Johji, submitted to Jpn. J. Appl. Phys.Google Scholar
14. Lindhard, J., Scharff, M. and Schiott, H. E., Mat. Fys. Medd. Dan. Vid. Selsk. 33, No 14, (1963).Google Scholar
15. Saito, Yasuyuki, Material Letters 13, 40 (1992).Google Scholar