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Carrier and Atomic Distributions in Si Implanted and Rapid Thermally Annealed InP ; Influence of Dual Implants of As or P

Published online by Cambridge University Press:  28 February 2011

Nicole DUIIAMEL ,
Brigitte DESCOUTS ,
Philippe KRAUZ ,
Krishna RAO ,
Jean DANGLA  and
Pierre HENOC
Nicole DUIIAMEL
Affiliation:
Centre National d'Etudes des Télécommunications 196, avenue Henri Ravera92220 BAGNEUX - FRANCE
Brigitte DESCOUTS
Affiliation:
Centre National d'Etudes des Télécommunications 196, avenue Henri Ravera92220 BAGNEUX - FRANCE
Philippe KRAUZ
Affiliation:
Centre National d'Etudes des Télécommunications 196, avenue Henri Ravera92220 BAGNEUX - FRANCE
Krishna RAO
Affiliation:
Centre National d'Etudes des Télécommunications 196, avenue Henri Ravera92220 BAGNEUX - FRANCE
Jean DANGLA
Affiliation:
Centre National d'Etudes des Télécommunications 196, avenue Henri Ravera92220 BAGNEUX - FRANCE
Pierre HENOC
Affiliation:
Centre National d'Etudes des Télécommunications 196, avenue Henri Ravera92220 BAGNEUX - FRANCE
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Abstract

Rapid thermal anneal (R.T.A.) by halogen lamps has been carried out to activate Si29 implants in semi-insulating InP substrates with the aim of realizing good contact areas at low depth (0.1 μm). To better understand the electrical behaviour of Si observed in these conditions, and to try to increase the electrical activity we performed dual implantations (As + Si or P + Si). The crystallographic disorder remaining after anneal and its influence on the electrical properties are discussed. The uniformity of activation has been evaluated by Hall effect and specific contact resistivity cartographies both for mono-implantations and for dual implantations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 443
Copyright
Copyright © Materials Research Society 1987

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References

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