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Carbon Nanotube Growth from Nanoscale Clusters Formed by Ion Implantation

Published online by Cambridge University Press:  26 February 2011

Yongho Choi ,
Jennifer Sippel Oakley ,
Andrew Rinzler  and
Ant Ural
Yongho Choi
Affiliation:
dodream@ufl.edu, University of Florida, Electrical and Computer Engineering, 530 ENG. Bldg. 33, Gainesville, Florida, 32611, United States, 352-392-8411
Jennifer Sippel Oakley
Affiliation:
sippicup@phys.ufl.edu, University of Florida, Physics, United States
Andrew Rinzler
Affiliation:
rinzler@phys.ufl.edu, University of Florida, Physics, United States
Ant Ural
Affiliation:
antural@ece.ufl.edu, University of Florida, Electrical and Computer Engineering, United States
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Abstract

We have demonstrated that iron ions implanted into silicon dioxide thin films form nanoscale clusters which can act as catalyst for carbon nanotube growth. We have implanted iron ions with an energy of 60 keV and three different doses (1014, 1015, and 1016 cm-2) into silicon dioxide thin films thermally grown on silicon substrates. We then used chemical vapor deposition (CVD) to grow carbon nanotubes on these ion implanted substrates with methane as the precursor gas. We studied the effect of ion implantation dose on the structural properties of the nanoscale clusters, as well as the carbon nanotubes nucleated from these clusters. The nanoscale clusters and grown nanotubes were characterized by Atomic Force Microscopy and Raman spectroscopy. The electrical characteristics of the as-grown nanotubes were also characterized. We found that growth of low density, horizontal, and small diameter carbon nanotubes on silicon dioxide is possible using this nucleation technique.

Keywords

nanostructurenucleation & growthion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO15-03
Copyright
Copyright © Materials Research Society 2006

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References

1 Dresselhaus, M.S., Dresselhaus, G., and Avouris, P., eds., Carbon nanotubes: Synthesis, Structure, Properties, and Applications, (Springer, New York, 2000).Google Scholar
2 Treacy, M. M. J., Ebbesen, T. W., and Gibson, J. M., Nature (London) 381, 678 (1996).Google Scholar
3 Wong, E. W., Sheehan, P. E., and Lieber, C. M., Science 277, 1971 (1997).Google Scholar
4 “Carbon nanotubes: preparation and properties,” edited by Ebbesen, T. W. (CRC press, 1996).Google Scholar
5 Liu, J., Fan, S., and Dai, H., MRS Bulletin 29, 244 (2004).Google Scholar
6 Kong, J., Soh, H. T., Cassell, A. M., Quate, C. F., and Dai, H., Nature (London) 395, 878 (1998).Google Scholar
7 Cheung, C. L., Kurtz, A., Park, H., and Lieber, C. M., Journal of Physical Chemistry B 106, 2429 (2002).Google Scholar
8 Plummer, J. D., Deal, M. D., and Griffin, P. B., Silicon VLSI Technology: Fundamentals, Practice, and Modeling, (Prentice Hall, Upper Saddle River, NJ, 2000).Google Scholar
9 Ding, X. Z., Chiah, M. F., Cheung, W. Y., Wong, S. P., Xu, J. B., and Wilson, I. H., Wang, H., Chen, L., and Liu, X., Journal of Applied Physics 86, 2550 (1999).Google Scholar
10 SRIM – The Stopping and Range of Ions in Matter by Ziegler, J. F., www.srim.org.Google Scholar
11 Jorio, A., Pimenta, M. A., Filho, A. G. Souza, Saito, R., Dresselhaus, G., and Dresselhaus, M. S., New Journal of Physics 5, 139.1 (2003).Google Scholar
12 Jorio, A., Saito, R., Dresselhaus, G. and Dresselhaus, M.S., The Royal Society 362, 2311 (2004).Google Scholar
13 Javey, A., Kim, H., Brink, M., Wang, Q., Ural, A., Guo, J., McIntyre, P., McEuen, P., Lundstrom, M., and Dai, H., Nature Materials 1, 241 (2002).Google Scholar