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Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions

  • Hirokazu Sanpei (a1) (a2), Takayuki Shima (a1) (a3), Yunosuke Makita (a1), Shinji Kimura (a1), Yasuhiro Fukuzawa (a1) (a4), Yo-ichi Nakamura (a4) and Adarsh Sandhu (a2)...

Abstract

The role of hydrogen (H) in carbon (C)-doped GaAs was examined by co-doping of C and H atoms using low-energy hydrocarbon (CH+ and CH3+) ions. Experiments were carried out using the combined ion beam and molecular beam epitaxy (CIBMBE) system. Samples were characterized by low-temperature photoluminescence at 2K and Hall effect measurements at room temperature. Results show that incorporated C atoms are optically and electrically activated as acceptors even by hydrocarbon ion impingement. The effect of H incorporation was found to be noticeable when impinged current density of CH3+ ion beam is high that produces equivalent net hole carrier concentration greater than ∼1018 cm−3

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Carbon Doping into GaAs Using Low-Energy Hydrocarbon Ions

  • Hirokazu Sanpei (a1) (a2), Takayuki Shima (a1) (a3), Yunosuke Makita (a1), Shinji Kimura (a1), Yasuhiro Fukuzawa (a1) (a4), Yo-ichi Nakamura (a4) and Adarsh Sandhu (a2)...

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