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Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation

Published online by Cambridge University Press:  21 March 2011

D. De Salvador ,
E. Napolitani ,
A. Coati ,
M. Berti ,
A.V. Drigo ,
M. Carroll ,
J.C. Sturm ,
J. Stangl ,
G. Bauer  and
L. Lazzarini
D. De Salvador
Affiliation:
Dept. of Physics, University of Padova and INFM, Padova, ITALY
E. Napolitani
Affiliation:
Dept. of Physics, University of Padova and INFM, Padova, ITALY
A. Coati
Affiliation:
Dept. of Physics, University of Padova and INFM, Padova, ITALY
M. Berti
Affiliation:
Dept. of Physics, University of Padova and INFM, Padova, ITALY
A.V. Drigo
Affiliation:
Dept. of Physics, University of Padova and INFM, Padova, ITALY
M. Carroll
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, USA
J.C. Sturm
Affiliation:
Dept. of Electrical Engineering, Princeton University, Princeton, USA
J. Stangl
Affiliation:
Inst. For Semiconductor Physics, J. Kepler University of Linz, Linz, AUSTRIA
G. Bauer
Affiliation:
Inst. For Semiconductor Physics, J. Kepler University of Linz, Linz, AUSTRIA
L. Lazzarini
Affiliation:
CNR-MASPEC, Parma, ITALY
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Abstract

In this work we investigated the diffusion and clustering of supersaturated substitutional carbon 200nm thick SiGeC layers buried under a silicon cap layer of 40nm. The samples were annealed in inert (N2) or oxidizing (O2) ambient at 850°C for times ranging from 2 to 10 hours. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N2 annealed samples. In the early stages of the oxidation process, carbon escape by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2-4h) which depends on the C concentration. This saturation is due to the formation and growth of C containing precipitates which are promoted by the I injection and act as a sink for mobile C atoms. The competition between clustering and diffusion is discussed for two different C concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J6.8
Copyright
Copyright © Materials Research Society 2001

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References

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