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The Carbon Co-implant with Spike RTA Solution for Boron Extension

Abstract

We present B junction extensions that are extremely abrupt and shallow manufactured by amorphization, C co-implantation and conventional rapid thermal annealing (RTA). Resulting junctions have abruptnesses of 2 nm/dec better than as-implanted profiles. The most shallow B junction that has been manufactured is 15 nm deep and Rs = 626 Ω/sq. Successful implementation of these junctions is straightforward for P-MOS 30 nm gate length devices.

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[1] Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Cristiano, F., Claverie, A., and Jaraíz, M., Phys. Rev. Lett. 82, 4460 (1999).
[2] Moroz, Victor, Oh, Yong-Seog, Pramanik, Dipu, Graoui, Houda, and Foad, Majeed A., Appl. Phys. Lett. 87, 051908 (2005).
[3] Pawlak, B. J., Janssens, T., Brijs, B., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N. E. B., submitted to Appl. Phys. Lett.

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