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Capacitance-Voltage Measurement of an Ambipolar Pentacene Field Effect Transistor in Operation by Using Displacement Current Measurement

Published online by Cambridge University Press:  22 September 2011

Yuya Tanaka ,
Yutaka Noguchi  and
Hisao Ishii
Yuya Tanaka
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
Yutaka Noguchi
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
Hisao Ishii
Affiliation:
Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Abstract

The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.

Keywords

devicesthin filmelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f03-06
Copyright
Copyright © Materials Research Society 2011

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