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Capacitance-Voltage Measurement of an Ambipolar Pentacene Field Effect Transistor in Operation by Using Displacement Current Measurement

  • Yuya Tanaka (a1), Yutaka Noguchi (a1) (a2) and Hisao Ishii (a1) (a2)

Abstract

The channel formation process of a pentacene ambipolar field-effect transistor was studied by displacement current measurement (DCM). We proposed a modified measurement circuit of DCM in order to investigate the channel formation at the organic/insulator interface under transistor operation. We observed an additional terrace structure between the depletion and accumulation states when the drain voltage is applied. The capacitance at the terrace structure corresponds well with that in pinch-off condition. DCM enables us to understand the operation mechanism of the organic FET in more detail.

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Capacitance-Voltage Measurement of an Ambipolar Pentacene Field Effect Transistor in Operation by Using Displacement Current Measurement

  • Yuya Tanaka (a1), Yutaka Noguchi (a1) (a2) and Hisao Ishii (a1) (a2)

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