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Calorimetric and Spectroscopic Characterization of Zone Refined and Regrown Lead Lodide

Published online by Cambridge University Press:  10 February 2011

K.-T. Chen
Affiliation:
Current Address: Digirad Co., 7408 Trade street, San Diego, CA 92121.
A. Burger
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
H. Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
Y.-F. Chen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
K. Hansen
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
L. Suber
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
S. Wilson
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
J. Henderson
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
G. W. Wright
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
M. L. Cole
Affiliation:
Center for Photonic Materials and Devices, Department of Physics, Fisk University, Nashville, TN 37208
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Abstract

Lead iodide starting materials have been purified by vertical zone refining process. The purest materials of the zone-refined ingot, middle zone, were used for single crystal growth by Bridgman method. Differential scanning calorimetry, current-voltage and low temperature photoluminescence measurements were employed to investigate the effectness of zone refining process and as-grown crystal. The results showed that the materials from the middle section of zone-refined ingot is the purest, followed by first-to-freeze and last-to-freeze materials. No second phase and deviation from stoichiometry have been observed after zone refining process and Bridgman crystal growth method. The resistivities increase as the purity and crystallinity of materials increases. Cleavage of as-grown crystal did damage the surface and caused additional emission at 2.0 eV. This emission band was not observed after a 10% NaI solution etching.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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