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Calculation of Optical Characteristics for Si1-xGExAlloy

Published online by Cambridge University Press:  15 February 2011

V. G. Litovchenkoe ,
S. I. Frolov ,
B. N. Shkarban  and
D. Kruger
V. G. Litovchenkoe
Affiliation:
Institute of Semiconductor Physics, Prospect Nauki 45, Kiev 252028, Ukraine
S. I. Frolov
Affiliation:
Institute of Semiconductor Physics, Prospect Nauki 45, Kiev 252028, Ukraine
B. N. Shkarban
Affiliation:
Institute of Semiconductor Physics, Prospect Nauki 45, Kiev 252028, Ukraine
D. Kruger
Affiliation:
Institute of Semiconductor Physics, W.Korsing Strasse 2, PSF 409, Frankfurt(Oder) 15204, Germany
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Abstract

In the framework of virtual crystal approximation using the empirical pseudopotential theory optical transitions of Si1 -xGexhave been calculated. The effects of hydrostatic and uniaxial stress, and alloy stoichiometry on the optical gaps were investigated. Since the mechanical stress and material composition affect the distinctive behaviour of different optical transitions it allows to put forward a spectral measurement technique for determination of crystal lattice strain and alloy parameter x simultaneously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 237
Copyright
Copyright © Materials Research Society 1995

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References

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