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Calculated Properties of Carbon Defects in Silicon

Published online by Cambridge University Press:  16 February 2011

J. Tersoff
J. Tersoff*
Affiliation:
IBM Research Division, T. J. Watson Research CenterYorktown Heights, NY 10598
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Abstract

The energies of carbon defects in silicon have been calculated, using an empirical classical potential, and used to infer defect properties and reactions. The results accord well with a variety of experimental data, including defect structures, activation energies for defect motion, and coupling to strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 193: Symposium Q – Atomic Scale Calculations of Structure in Materials , 1990 , 167
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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