Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-23T10:24:10.373Z Has data issue: false hasContentIssue false
  • English
  • Français

C− Outgrowths in C+ Thin Films of LiNbO3 on Al2O3-c

Published online by Cambridge University Press:  15 February 2011

J. J. Kingston ,
D. K. Fork ,
F. Leplingard  and
F. A. Ponce
J. J. Kingston
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. Leplingard
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Abstract

Thin-film waveguides of LiNbO3 have been grown on Al2O3-c by off-axis rf magnetron sputtering. The films have been characterized optically by prism coupling measurements, crystallographically by x-ray diffraction, and morphologically by atomic force microscopy. We find that optical losses can be dominated by scattering from large outgrowths that litter the surface of the film. These outgrowths are c− grains imbedded in a c+ matrix. Although some grains nucleate c−, others have their polarity reversed from c+ to c− after nucleation. A model will be presented to explain the preferential nucleation of c+ grains on Al2O3-c. The c− grains grow much faster than the c+ ones because of attractive coulombic forces between the c− grains and the ionized Li and Nb species in the sputter plume.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 289
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kingston, J. J., Fork, D. K., and Leplingard, F., Proc. of MRS Soc. Symp. on New Materials for Advanced Solid State Lasers, edited by Chai, B. H. T., Fan, T. Y.. Payne, S. A., and Cassanho, A., accepted for publication.Google Scholar
2. Nassau, K., Levinstein, H. J., Loiacono, G. M., J. Phys. Chem. Solids 27,983 (1966).Google Scholar
3. Hiskes, R. et al, Proc. of MRS Soc. Symp. on MOCVD of Electronic Ceramics, edited by Desu, S. B., Beach, D. B., Wessels, B. W., and Gokoglu, S., accepted for publication.Google Scholar
4. Abrahams, S. C., Reddy, J. M., and Bernstein, J. L., J. Phys. Chem. Solids 27, 997 (1966).Google Scholar
5. Lines, M. E. and Glass, A. M., Principles and Applications of Ferroelectrics and Related Materials, p. 94–95, Clarendon Press, Oxford 1977.Google Scholar
6. Xi, X. X. et al, Appl. Phys. Lett. 57, 96 (1990).Google Scholar