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C Implantation for Suppression of Dislocation Formation

  • J. R. Liefting (a1) (a2), J. S. Custer (a2) and F. W. Saris (a2)

Abstract

This paper will show that annealing of Si implanted with moderate doses of 725 keV B results in the formation of secondary defects, the so-called category I dislocations. Surprisingly, 12C, with roughly the same mass as 11B, behaves in a very different way. Carbon implant damage does not result in dislocation formation even for damage levels > 100 times higher than that required for B implants. C is also able to avoid dislocation formation of co-implanted B ions. The C-dose needed to avoid dislocation formation for the B implant increases nonlinearly with B-dose. Special C-related secondary defects remain after annealing if the C-dose is higher than 4×1015 /cm2.

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[1] Jones, K.S., Prussin, S., and Weber, E.R., Appl. Phys. A45, 1 (1988).
[2] Schreutelkamp, R.J., Custer, J.S., Liefting, J.R., Lu, W.X., and Saris, F.W., Mater. Sci. Rept. 6, 275 (1991).
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C Implantation for Suppression of Dislocation Formation

  • J. R. Liefting (a1) (a2), J. S. Custer (a2) and F. W. Saris (a2)

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