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Buried Quantum Well Structure Fabricated by in Situ EB Lithography

Published online by Cambridge University Press:  25 February 2011

H. Kawanishi ,
Y. Sugimoto ,
T. Ishikawa ,
N. Tanaka  and
H. Hidaka
H. Kawanishi
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5, Tohkodai, Tsukuba, Ibaraki 300-26, Japan
Y. Sugimoto
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5, Tohkodai, Tsukuba, Ibaraki 300-26, Japan
T. Ishikawa
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5, Tohkodai, Tsukuba, Ibaraki 300-26, Japan
N. Tanaka
Affiliation:
Optoelectronics Technology Research Laboratory, 5-5, Tohkodai, Tsukuba, Ibaraki 300-26, Japan
H. Hidaka
Affiliation:
Fujikura Ltd., Optical Device Section, Advanced Technology R&D Center, 1440, Mutsuzaki Sakura, Chiba 285, Japan
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Abstract

Buried quantum well structures have been fabricated in GaAs/AIGaAs system using an in situ lithography process. The process utilizes an ultrathin oxide layer formed in situ on a GaAs surface as a mask against Cl2 gas etching. An electron beam (EB)-induced Cl2 gas etching is used to locally remove the oxide mask for positive-type lithography. For negativetype lithography, the oxide mask is selectively formed on a GaAs surface by EB-stimulated oxidation. Subsequent Cl2 gas etching results in the formation of isolated quantum wells. After removing the oxide mask, overgrowth using molecular beam epitaxy is successfully carried out on the patterned surface. The cathodoluminescence image of the buried quantum well demonstrates the high quality of the resulting structure formed by this “in situ EB lithography” process. The photoluminescence intensity from the quantum well of the processed sample is proved to be the same order of magnitude compared with that from a successively grown sample, showing that the use of the oxide mask causes no serious degradation in the processed interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 147
Copyright
Copyright © Materials Research Society 1992

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References

1 Ehrlich, D.J., Black, J.G., Rothshild, M., and Pang, S.W., J.Vac.Sci.Technol. B6, 895 (1989).Google Scholar
2 Wang, Y.L., Temkin, H., Harriott, L.R., Hamm, R.A., and Weiner, J.S., Appl.Phys.Lett. 57, 1672 (1990). J.S. Weiner, Y.L. Wang, H. Temkin, L.R. Harriott, R.A. Hamm, and M.B. Panish, J.Vac.Sci.Technol. B8, 1371 (1990). and references therein.Google Scholar
3 Taneya, M., Sugimoto, Y., and Akita, K., J.Appl.Phys. 66, 1375 (1989).Google Scholar
4 Kosugi, T., Mimura, R., Aihara, R., Gamo, K., and Namba, S., Jpn.J.Appl.Phys. 29, 2295 (1990).Google Scholar
5 Taneya, M., Sugimoto, Y., Hidaka, H., and Akita, K., Jpn.J.Appl. Phys. 28, L515 (1990); J.Appl.Phys. 67, 4297 (1990).Google Scholar
6 Sugimoto, Y., Taneya, M., Akita, K., and Kawanishi, H., J.Appl. Phys. 69, 2725 (1991); Microelectron.Eng. 13, 403 (1991).Google Scholar
7 Kawanishi, H., Sugimoto, Y., Ishikawa, T., and Hidaka, H., to be published in Appl.Phys. Lett.Google Scholar
8 Sugimoto, Y., Akita, K., Taneya, M., Kawanishi, H., Aihara, R., and Watahiki, T., Rev.Sci. Instrum. 62, 1828 (1991).Google Scholar
9 Sugimoto, Y. et al. (unpublished)Google Scholar