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Buried Insulators and/or Conductors in Singles-Crystal Silicon Using Porous Silicon Techniques

Published online by Cambridge University Press:  28 February 2011

Sylvia S. Tsao
Sylvia S. Tsao*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

Porous silicon lends itself to a variety of applications due to its unique characteristics such as an interconnected pore network, large surface area, and dopant-dependent selectivity of formation. Although the best-known application of porous Si is for silicon-on-insulator (SOI) fabrication, the porous silicon technique also offers elegant approaches for silicon-on-conductor (SOC) fabrication.

In this paper, we present an overview of porous Si techniques for both SOI and SOC applications. Possible limitations of the oxidized porous silicon process, for SOI in particular, are discussed. We also consider novel and multilayered structures which might be obtained using porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 429
Copyright
Copyright © Materials Research Society 1988

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