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Brightness Degradation Controlled by Current Induced Metastable Defect Creation in a-SiC:H Based Light Emitting Diodes

  • R. Rizzoli (a1), C. Summonte (a1), R. Galloni (a1), M. Ruth (a1), A. Desalvo (a2), F. Zignanf (a2), P. Rava (a3), F. Demichelis (a4), C. F. Pirri (a4), E. Tresso (a4), G. Crovini (a4), F. Giorgis (a4) and A. Madan (a5)...


A study of the electroluminescence degradation of a-SiC:H based light emitting devices (LED) is presented for the first time. The best initial peak brightness obtained is 4.2 cd/m2. All LEDs reported in this paper emit a red light which, when operated under continuous bias in a not fully darkened room, is visible for several minutes, depending on degradation rate. The time dependence of LED degradation, which is reversible upon annealing, can be explained if self-annealing is taken into account. There is evidence of an improved LED performance for lower temperature operation. Pulsed operation, with respect to dc operation, produces a markedly lower defect production rate, associated to a higher brightness after degradation. The possibility of some optimization of the operation parameters (peak current, duty cycle) is discussed.



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1. Street, R.A., Appl. Phys. Lett., 59, 1084 (1991).
2. Hong, J.W., Shin, N.F., Jen, T.S., Ning, S.L. and Chang, C.Y., IEEE Trans. ED Letters, 13, 375 (1992);
Jen, T.S., Pan, J.W., Shin, N.F., Hong, Y.W. and Chang, C.Y., IEEE Trans. ED Letters, 41, 1761 (1994);
Boonkosum, W., Kruangam, D., Panyaekow, S. and De Lang, B. in Amorphous Silicon Technology-1994, edited by Schiff, E.A. Hack, M., Madan, A., Powell, M., and Matsuda, A. (Mater. Res. Soc. Proc. 336, Pittsburgh, PA, 1994) p. 849.
3. Kruangam, D., in Amorphous and Microcrystalline Semiconductor Devices - Optoelectronic Devices, edited by Kanicki, J. (published Artech House, Boston, 1991) pp. 205207.
4. Stutzmann, M., Jackson, W.B., Tsai, C.C., Phys. Rev. B, 32, 23 (1985).
5. Nieuwesteeg, K.J.B.M., Boogaard, J., and Oversluizen, G. in Amorphous Silicon Technology-1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A., and Schiff, E.A. (Mater. Res. Soc. Proc. 258, Pittsburgh, PA, 1992) p. 479.
6. Jackson, W.B., Phys. Rev. B, 41, 1059, (1990)
7. Street, R.A. and Hack, M., in Amorphous Silicon Technology-1991, edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., and LeComber, P.G. (Mater. Res. Soc. Proc. 219, Pittsburgh, PA, 1991) p. 135
8. Winer, K., Phys Rev. B, 41, 12150 (1990).


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