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Bowing Parameter of AlxGa1-xN

Published online by Cambridge University Press:  01 February 2011

Feng Yun ,
Michael A. Reshchikov ,
Lei He ,
Thomas King ,
M. Zafar Iqbal ,
Hadis Morkoç ,
Steve W. Novak  and
Luncun Wei
Feng Yun
Affiliation:
Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284;
Michael A. Reshchikov
Affiliation:
Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284;
Lei He
Affiliation:
Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284;
Thomas King
Affiliation:
Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284;
M. Zafar Iqbal
Affiliation:
Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284;
Hadis Morkoç
Affiliation:
Dept. of Electrical Engineering, Virginia Commonwealth University, Richmond, VA 23284;
Steve W. Novak
Affiliation:
Evans East, a member of the Evans Analytical Group, East Windsor, NJ 08520;
Luncun Wei
Affiliation:
Charles Evans and Associates, a member of the Evans Analytical Group, Sunnyvale, CA.
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Abstract

AlxGa1-xN samples covering the entire range of alloy compositions, 0≤x≤1, were grown by plasma-assisted MBE on c-plane sapphire substrates. The aluminum mole fraction was determined, by three different techniques, namely, x-ray diffraction, secondary ion mass spectroscopy, and Rutherford backscattering spectrometry. The energy bandgaps of the alloys were obtained from low temperature reflectance spectra. The data lead to a bowing parameter of b=1.0 eV in relating the bandgap of the AlxGa1-xN alloy to its chemical composition. A discussion of bowing parameter determination is presented along with possible causes for the large dispersion in previously reported bowing parameter values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K3.2
Copyright
Copyright © Materials Research Society 2002

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