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Boron-Interstitial Cluster Kinetics: Extraction of Binding Energies from Dedicated Experiments

  • Christophe J. Ortiz (a1), Peter Pichler (a1), Volker Häaublein (a1), Giovanni Mannino (a2), Silvia Scalese (a2), Vittorio Privitera (a2), Sandro Solmi (a3) and Wilfried Lerch (a4)...

Abstract

A description of the transient diffusion and activation of boron during post-implantation an- nealing steps is one of the most challenging tasks. In industrially relevant situation, it needs to address diffusion at extrinsic concentrations, the agglomeration of self-interstitials, and the formation of boron-interstitial clusters. This article describes the experimental work performed or used to calibrate model parameters as independently as possible. In particular, the experiments used to extract information about the energetics of boron-interstitial clusters are described.

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1. Pelaz, L., Jaraiz, M., Gilmer, G. H., Gossmann, H.-J., Rafferty, C. S., Eaglesham, D. J., and Poate, J. M., Appl. Phys. Lett., 70(17), 2285 (1997).
2. Caturla, M.-J., Rubia, T. Diaz de la, Zhu, J., and Johnson, M. In Rubia, T. Diaz de la, Coffa, S., Stolk, P. A., and Rafferty, C. S., Eds., Defects and Diffusion in Silicon Processing, Vol. 469 of Mat. Res. Soc. Symp. Proc., 335, 1997.
3. Pichler, P. In Downey, D. F., Law, M. E., Claverie, A. P., and Rendon, M. J., Eds., Silicon Front- End Junction Formation Technologies, Vol. 717 of Mat. Res. Soc. Symp. Proc., C3.1.1, 2002.
4. Solmi, S., Bersani, M., Sbetti, M., Hansen, J. Lundsgaard, and Larsen, A. Nylandsted, J. Appl. Phys., 88(8), 4547 (2000).
5. Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., and Pötzl, H. W., IEEE Trans. Computer- Aided Design, CAD–4(4), 384 (1985).
6. Silvestri, H. H., Sharp, I. D., Bracht, H. A., Nicols, S. P., Beeman, J. W., Hansen, J., Nylandsted-Larsen, A., and Haller, E. E. In Ashok, S., Chevallier, J., Johnson, N. M., pori, B. L. So-, and Okushi, H., Eds., Defect and Impurity Engineered Semiconductors and Devices III, Vol. 719 of Mat. Res. Soc. Symp. Proc., F13.10.1, 2002.
7. Crowder, B. L., Ziegler, J. F., Morehead, F. F., and Cole, G. W. In Crowder, B. L., Ed., Ion Implantation in Semiconductors and Other Materials, 267, New York, 1973. Plenum Press.
8. Miyake, M., J. Appl. Phys., 57(6), 1861 (1985).
9. Tsoukalas, D. and Chenevier, P., phys. stat. sol. (a), 92, 495 (1985).
10. Willoughby, A. F. W., Evans, A. G. R., Yallup, P. C. K. J., Godfrey, D. J., and Dowsett, M. G., J. Appl. Phys., 59(7), 2392 (1986).
11. Kashio, T. and Kato, K. In Extended Abstracts of the 20th Conference on Solid State Devices and Materials, 121, Tokyo, 1988. Business Center for Academic Societies.
12. OrrArienzo, W. A., Glang, R., Lever, R. F., Lewis, R. K., and Morehead, F. F., J. Appl. Phys., 63(1), 116 (1988).
13. Ortiz, C. J., Pichler, P., Fühner, T., Cristiano, F., Claverie, A., Colombeau, B., and Cowern, N. E. B., A physically-based model for the spatial and temporal evolution of extrinsic defects in ion implanted silicon (submitted to J. Appl. Phys.), 2004.
14. Cowern, N. E. B., Mannino, G., Stolk, P. A., Roozeboom, F., Huizing, H. G. A., Berkum, J. G. M. van, Cristiano, F., Claverie, A., and Jaraíz, M., Phys. Rev. Lett., 82(22), 4460 (1999).
15. Cristiano, F., Cherkashin, N., Hebras, X., Calvo, P., Lamrani, Y., Scheid, E., Mauduit, B. de, Colombeau, B., Lerch, W., Paul, S., and Claverie, A., Nuclear Instruments and Methods in Physics Research B, 216, 45 (2004).
16. Windl, W., Liu, X.-Y., and Masquelier, M. P., phys. stat. sol. (b), 226(1), 37 (2001).
17. Fühner, T., Erdmann, A., Farkas, R., Tollkühn, B., and K'okai, G. in Proceedings of EvoWork- shops 2004, edited by Raidl, et al. (in print), 2004.
18. Jaraiz, M., Castrillo, P., Pinacho, R., Pelaz, L., Barbolla, J., Gilmer, G. H., and Rafferty, C. S. In Agarwal, A., Pelaz, L., Vuong, H.-H., Packan, P., and Kase, M., Eds., Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions II, Vol. 610 of Mat. Res. Soc. Symp. Proc., B11.1.1, 2000.
19. Yamauchi, J., Aoki, N., and Mizushima, I., Phys. Rev. B, 63, 073202 (2001).
20. Windl, W., IEICE Trans. Electron., E86–C(3), 269 (2003).

Boron-Interstitial Cluster Kinetics: Extraction of Binding Energies from Dedicated Experiments

  • Christophe J. Ortiz (a1), Peter Pichler (a1), Volker Häaublein (a1), Giovanni Mannino (a2), Silvia Scalese (a2), Vittorio Privitera (a2), Sandro Solmi (a3) and Wilfried Lerch (a4)...

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