Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-17T13:32:26.216Z Has data issue: false hasContentIssue false
  • English
  • Français

Boron Phosphide on Silicon for Radiation Detectors

Published online by Cambridge University Press:  26 February 2011

J. C. Lund ,
F. Olschner ,
F. Ahmed  and
K. S. Shah
J. C. Lund
Affiliation:
Radiation Monitoring Devices, Inc.Watertown, MA 02172
F. Olschner
Affiliation:
Radiation Monitoring Devices, Inc.Watertown, MA 02172
F. Ahmed
Affiliation:
Devcom Inc., Framingham, MA 01701
K. S. Shah
Affiliation:
Radiation Monitoring Devices, Inc.Watertown, MA 02172
Get access

Abstract

We report on radiation detectors fabricated from boron phosphide (BP) layers. These devices were fabricated by growing 1 to 10 μm thick layers of BP by chemical vapor deposition (CVD) on (100) oriented n-type silicon substrates. Ohmic contacts were applied to the Si (Au-Sb). Schottky barrier contacts (also Au-Sb) were applied to the BP layer. The devices were tested as radiation detectors and were found to be capable of detecting individual 5.5 MeV alpha particles. With some improvements we hope to fabricate neutron detectors from these devices, making use of the very high cross-section of boron for thermal neutrons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 601
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kamijoh, T. and Kuriyama, K., Blue-band Emission in LilnS2 , Crystals, J. Appl. Phys., 51, p. 1827, (1980).Google Scholar
2. Smith, C.J. and Lowe, C.W., Stoichiometric Effects on the Optical Properties ofLilnSe2 , J. Appl. Phys., 66, p. 5102, (1989).Google Scholar
3. Bacewicz, R. and Ciszelk, T.F., Preparation and Characterization of Some AIBIICV Type Semiconductors, Appl. Phys. Lett., 52, p. 1150, (1988).Google Scholar
4. Archer, R.J., Koyama, R. Y., Loebner, E.E. and Lucas, R.C., Optical Absorption, Electroluminescence and the Bandgap ofBP, Phys. Rev. Lett., 12, p. 538, (1964).Google Scholar
5. Kumashiro, Y., Okada, Y. and Gonda, S., Crystal Growth Of Thick Layers of Boron Phosphide, J. Crystal Growth, 70, p. 538, (1984).Google Scholar
6. Kumashiro, Y. and Okada, Y., Schottky Barrier Diodes Using Thick Well-Characterized Boron Phosphide Wafers, Appl. Phys. Lett., 47, p. 64, (1985).Google Scholar
7. Kumashiro, Y., Okada, Y., Misawa, S. and Koshiro, T., The Preparation of 10BP Single Crystals, Proc. Electrochem. Soc., 87–88, p. 813, (1987).Google Scholar
8. Kumashiro, Y., Kudo, K., Matsumoto, K., Okado, Y. and Koshiro, T., Thermal Neutron Irradiation Experiments on 10BP Single-Crystal Wafers, J. Less-Common Metals, 143, p. 71, (1988).Google Scholar
9. Kim, C.J. and Shono, K., Deviation from Stoichiometry of Boron Monophosphide, J. Electrochem. Soc.: Solid-State Science and Technology, p. 120, January (1984).Google Scholar
10. Olschner, F., Lund, J.C., Squillante, M.R. and Kelly, D. L Indium Phosphide Particle Detectors, IEEE Trans. Nuc. Sci., NS-36, p. 210, (1989).Google Scholar