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Bonding of Hydrogen Implanted at 80K INTO III-V Semiconductors

Published online by Cambridge University Press:  26 February 2011

H. J. Stein
H. J. Stein*
Affiliation:
Sandia National Laboratories, P. O. Box 5800, Albuquerque, New Mexico 87185–5800, U. S. A.
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Abstract

Hydrogen implantation at 80K is shown to introduce As-H centers in GaAs and InAs, and P-H centers in InP. These As (P)-H centers anneal between 150 and 300K. By analogy to suggested defect assignments in electron-irradiated GaAs, it is suggested that the sites for the As (P)-H centers are metastable defects such as close vacancy-interstitial pairs. In contrast to GaAs, where absorption by Ga-H centers increases upon loss of As-H, no absorption attributable to In-H was observed in either InAs or InP. Hydrogen in an As vacancy is the suggested model for Ga-H centers. If such vacancies are thermally unstable in In-based compounds, it would explain an absence of In-H bonds and may reduce the capability for ion implantation to produce electrical isolation in In-based compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 655
Copyright
Copyright © Materials Research Society 1992

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References

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