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Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD

Published online by Cambridge University Press:  31 January 2011

Volodymyr Ivashchenko ,
Andrey Vasin ,
L. A. Ivashchenko  and
P. L. Skrynskyy
Volodymyr Ivashchenko
Affiliation:
ivash@materials.kiev.ua, Institute of problems of Material Science, NAS of Ukraine, Material Science of Refractory Compounds, Krzhyzhanovsky str. 3, Kyiv, 03142, Ukraine, +380-44-42422540, +380-44-4242131
Andrey Vasin
Affiliation:
av966@yahoo.com, Institute of Semiconductor Physics, NAS oF Ukraine, Kyiv, Ukraine
L. A. Ivashchenko
Affiliation:
IvashchenkoLA@FAKEEMAIL.COM, Institute for Problems of Material Science, NAS of Ukraine, Kyiv, Ukraine
P. L. Skrynskyy
Affiliation:
Skrynskyy@fakeemila.com, Institute for Problems of Material Science, NAS of Ukraine, Kyiv, Ukraine
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Abstract

Photoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL.

Keywords

photoemissionnanostructureplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A16-01
Copyright
Copyright © Materials Research Society 2009

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