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Blue Lasers Based on II-VI Semiconductor Heterostructures

  • Z. Yu (a1), J. Ren (a1), Y. Lansari (a1), K. J. Gossett (a1), B. Sneed (a1), K. A. Bowers (a1), J. W. Cook (a1) and J. F. Schetzina (a1)...

Abstract

Properties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

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Blue Lasers Based on II-VI Semiconductor Heterostructures

  • Z. Yu (a1), J. Ren (a1), Y. Lansari (a1), K. J. Gossett (a1), B. Sneed (a1), K. A. Bowers (a1), J. W. Cook (a1) and J. F. Schetzina (a1)...

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