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Bilayer Structures Obtained by Pulsed Laser Quenching of Binary Systems

  • P. Baeri (a1), G. Foti (a1), M. G. Grimaldi (a1), F. Priolo (a1), R. Reitano (a1), A. G. Cullis (a2) and N. G. Chew (a2)...

Abstract

NiSi and Ni2Si layers on silicon substrates as well as high fluence Si(As) ion implanted layers,have been rapidly melted by 30 ns Nd laser pulse irradiation.The energy density ranged between 0.4 and 1.2 J/cm2. Bilayer structures have been observed when the energy density has been chosen properly.

Buried epitaxial layers together with an amorphous or a policrystalline layer on top,have been detected by RBS and TEM measurements.

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Bilayer Structures Obtained by Pulsed Laser Quenching of Binary Systems

  • P. Baeri (a1), G. Foti (a1), M. G. Grimaldi (a1), F. Priolo (a1), R. Reitano (a1), A. G. Cullis (a2) and N. G. Chew (a2)...

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