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Bidimensional Numerical Analysis of A μc-Si:H P-I-N Photodiode under Local Illumination

Published online by Cambridge University Press:  15 February 2011

A. Fantoni ,
M. Vieira  and
R. Martins
A. Fantoni
Affiliation:
UNINOVA/FCT-UNL, Quinta da Tome, Monte da Caparica 2825, Portugal
M. Vieira
Affiliation:
ISEL/UNINOVA, Quinta da Torre, Monte da Caparica 2825, Portugal
R. Martins
Affiliation:
UNINOVA/FCT-UNL, Quinta da Tome, Monte da Caparica 2825, Portugal
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Abstract

The behaviour of a inicrocrystalline p-i-n junction locally illuminated with monochromatic radiation (incident power of 50 mW/cm2) is analysed by means of numerical experiences. The model used for the two-dimensional analysis of the transport properties of a μc-Si:H p-i-n photo-detector is based on the simultaneous solution of the continuity equations for holes and electrons together with the Poisson's equation. The solution is found on a rectangular domain, taking into account the dimension perpendicular to the junction plane and one on the parallel plane. The lateral effects occurring wimin the structure, due to the non-uniformity of the illumination, are outlined. The results we present show that the potential profile has a linear variation from the illuminated to the dark neutral region. The lateral components of the electric field and of the current density vectors reveal to be mainly localised inside the doped layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 765
Copyright
Copyright © Materials Research Society 1997

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References

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