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The Best Way to Obtain Good Quality CVD-TiN Films from TiCl4 and NH3

Published online by Cambridge University Press:  10 February 2011

Hirotaka Hamamura ,
Yukihiro Shimogaki ,
Yasunobu Akiyama ,
Yasuyuki Egashira  and
Hiroshi Komiyama
Hirotaka Hamamura
Affiliation:
Department of Chemical System Engineering, University of Tokyo, Tokyo, JAPAN hamamura@prosys.t.u-tokyo.ac.jp
Yukihiro Shimogaki
Affiliation:
Department of Chemical System Engineering, University of Tokyo, Tokyo, JAPAN hamamura@prosys.t.u-tokyo.ac.jp
Yasunobu Akiyama
Affiliation:
Institute of Advanced Material Study, Kyushu University, Fukuoka, Japan
Yasuyuki Egashira
Affiliation:
Division of Chemical Engineering, University of Osaka, Osaka, Japan
Hiroshi Komiyama
Affiliation:
Department of Chemical System Engineering, University of Tokyo, Tokyo, JAPAN hamamura@prosys.t.u-tokyo.ac.jp
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Abstract

TiN films deposited by CVD utilizing TiCl4 and NH3 are widely used in ULSI processes. The residual chlorine in the film is one of the major issues of TiCl4 based chemistry [1–5]. We have examined the kinetics of TiN-CVD using TiCl4 and NH3 as precursors to determine method for controlling the residual chlorine concentration.

We analyzed the deposition rate profiles obtained from a simple tubular isothermal reactor. Deposition was performed over the temperature range from 300°C to 500°C and with varying initial concentrations of TiCl4 and NH3. We found that the deposition rate was independent of the TiCl4 concentration at higher concentrations. The deposition rate was proportional to the TiCl4 concentration in the low concentration range. This phenomenon can be well explained by a Langmuir-Hinshelwood type mechanism. Examination of the deposition rate dependence on the concentration of NH3 showed that both the maximum deposition rate at high TiCl4 concentrations and the first order kinetic rate constant in the lower TiCl4 concentration range were proportional to the NH3 concentration. These results indicate that the deposition was controlled by the Eley-Rideal mechanism. The residual chlorine concentration was found to be proportional to the surface coverage factor of adsorbed TiCl4. We conclude that the best way to obtain good quality TiN films can be obtained theoretically through these kinetic studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 501
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Yokoyama, N., Hinode, K. and Homma, Y., J. Electrochem. Soc., 136, 882, (1989).Google Scholar
2. Sherman, A., J. Electrochem. Soc., 137, 1892, (1990).10.1149/1.2086826Google Scholar
3. Buiting, M. J., Otterloo, A. F. and Montree, A. H., J. Electrochem. Soc., 138, 500, (1991).Google Scholar
4. Hegde, Rama I., Fiordalice, Robert W., Travis, Edward O. and Tobin, Philip J., J. Vac. Sci. Technol., BI1, 1287, (1993).10.1116/1.586931Google Scholar
5. Price, J.B., O., John Borland and Steve Selbrede, Thin Solid Films, 236, 311, (1993).Google Scholar
6. Shimogaki, Y., Akiyama, Y., Ohkubo, T., Saito, T., Egashira, Y., Sugawara, K., Imaishi, N., and Komiyama, H., Conference Proceedings, VLSI Multilevel Interconnection Conference (VMIC), ULSI XII, 385, (1997).Google Scholar