Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-22T12:14:37.776Z Has data issue: false hasContentIssue false
  • English
  • Français

Beryllium Doping in MBE-grown GaAs and AlGaAs

Published online by Cambridge University Press:  25 February 2011

Joseph Pellegrino ,
James Griffin ,
Leary Myers  and
Michael Spencer
Joseph Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Md.;
James Griffin
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, D.C.
Leary Myers
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, D.C.
Michael Spencer
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, D.C.
Get access

Abstract

Beryllium is an effective p-dopant in GaAs and AlGaAs and plays an important role in device characterizations of hetero bipolar transistors. This work addresses the doping and mobility properties for two series of beryllium-doped samples: GaAs and AlGaAs. Within each series the doping ranged between 3×1015cm-3 to levels of 5×1019cm-3. Mobility and carrier concentrations were obtained through Hall and Polaron measurements. The doping concentration results suggest the onset of carrier compensation at higher doping levels. One possible explanation is that for high doping levels, Be is incorporated as interstitial donors. A thermodynamic model is used to explain the observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 881
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Duhamel, N., Henot, P., Alexandre, F., and Rao, E. V. K., Appl. Phys. Lett. 39, 49 (1981).Google Scholar
2 Tuck, B. and Kadmin, M. A. H., J. Mater. Sci. 7, 585 (1972).Google Scholar
3 Gosele, V. and Morehead, F., J. Appl. Phys. 52, 4617 (1981).Google Scholar
4 van Ommen, A. H., J. Appl. Phys. 54, 5055 (1983).Google Scholar
5 Weisberg, L. R. and Blanc, J., Phys. Rev. 131 (4), 1548 (1963).Google Scholar
6 Kirchner, P., Jackson, T., Pettit, G., and Woodall, J., Appl. Phys. Lett. 47 (1) (1 July 1985).Google Scholar
7 Enquist, P., Lunardi, L., Wicks, G., Eastman, L., and Hitzman, C., J. Vac. Sci. Technol. B3 (2), 634–635 (March/April 1985).Google Scholar
8 Llegems, M., J. Appl. Phys., Vol. 48 (3), 1278–1287 (March 1977).Google Scholar