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Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

Published online by Cambridge University Press:  15 February 2011

K Tanahashi ,
N. Inoue  and
Y. Mizokawa
K Tanahashi
Affiliation:
College of Intergrated Arts and Science, Osaka Prefecture University 1–1; Gakuencho, Sakai, Osaka, 593 Japan
N. Inoue
Affiliation:
Research Institute for Advanced Science and Technology, Osaka Prefecture University 1–2, Gakuencho, Sakai, Osaka, 593 Japan
Y. Mizokawa
Affiliation:
College of Intergrated Arts and Science, Osaka Prefecture University 1–1; Gakuencho, Sakai, Osaka, 593 Japan
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Abstract

The origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 131
Copyright
Copyright © Materials Research Society 1997

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