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Behavior of Metastable Te Donor Concentrations in Q-Switched Ruby Laser Annealed GaAs

Published online by Cambridge University Press:  15 February 2011

P. Pianetta ,
J. Amano ,
G. Woolhouse  and
C. A. Stolte
P. Pianetta
Affiliation:
Hewlett-Packard Laboratories, 1501, Page Mill Road, Palo Alto, California, USA
J. Amano
Affiliation:
Hewlett-Packard Laboratories, 1501, Page Mill Road, Palo Alto, California, USA
G. Woolhouse
Affiliation:
Hewlett-Packard Laboratories, 1501, Page Mill Road, Palo Alto, California, USA
C. A. Stolte
Affiliation:
Hewlett-Packard Laboratories, 1501, Page Mill Road, Palo Alto, California, USA
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Abstract

The thermal behavior of Te implanted, laser annealed GaAs was investigated by helium backscattering spectroscopy and transmission electron microscopy in order to correlate structural changes with the two stage reduction in the carrier concentration due to post laser anneal heating above 200°C. The activation energy for stage one which occurs in the range 200–400°C was determined to be approximately 1.3 eV. Post laser anneal heating at 450°C caused no observable structural changes. On the other hand, 850°C post laser anneal heating induced the formation of precipitates and dislocation loops as well as narrowing the channeling half-angle of Te by about 11%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 239
Copyright
Copyright © Materials Research Society 1981

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References

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