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Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

  • Satoshi Nozu (a1), Koichiro Matsuda (a2) and Takashi Sugino (a1)

Abstract

GaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

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Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

  • Satoshi Nozu (a1), Koichiro Matsuda (a2) and Takashi Sugino (a1)

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