Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-08T08:47:33.910Z Has data issue: false hasContentIssue false

B(Ch3)3 as P Layer Doping Gas

Published online by Cambridge University Press:  25 February 2011

D. S. Shen
Affiliation:
Glasstech Solar, Inc., 6800 Joyce Street, Golden, CO 80403, USA
Get access

Abstract

The boron doped p-layer is a critical part of a-Si:H solar cells. Trimethylboron (B(CH3)3) has been suggested to be a better doping gas and has a better thermal stability than B2H6. Single junction a-Si:H solar cells and a-Si:H/a-Si:H tandem cells with the p-layers deposited using B(CH3)3 have resulted in conversion efficiencies of 11.4% and 10.4%, respectively. Using these new p+-layers, we also reached 10% efficiencies in single junction a-Si:H solar cells with the i-layer deposited at a high deposition rate of ∼ 2 nm/s from either SiH4 or Si2H6 as a source gas.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Yamanaka, S., Konagai, M. and Takahashi, K., Proc. of 20th IEEE Photovoltaic Specialist Conference (IEEE, Las Vegas, 1988), p. 160.Google Scholar
Roca i Cabarrocas, P., Kumar, S. and Drevillon, B., J. Appl. Phys., Sept. 15, 1989.Google Scholar
Tarui, H., Matsyama, T., Okamoto, S., Hishikawa, Y., Dohjo, H., Nakamura, N., Tsuda, S., Nakano, S., Ohnishi, M. and Kuwano, Y., Technical Digest of 3rd International Photovoltaic Science and Engineering Conference, p. 41, 1987.Google Scholar
4. Catalano, A., Arya, R., Bennett, M., Yang, L., Morris, J., Golgstein, B., Fieselman, B., Newton, J. and Wiedman, S., Solar Cells, 27, 25 (1989)Google Scholar
5. Zhongyan, Wu, Lloret, A., Siefert, J.M., Roca i Cabarrocas, P. and Equer, B., in Amorpohous Silicon Technology - 1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y. and LeComber, P.G. (Mater. Res. Soc. Pro. 149, Pittsburgh, PA 1989), pp. 291296.Google Scholar
6. See e.g., Bhat, P.K., Marshall, C., Sandwisch, J., Chatham, H., Schropp, R.E.I., and Madan, A., Proc. of 20th IEEE Photovoltaic Specialist Conference (IEEE, Las Vegas, 1988), p. 91.Google Scholar
7. Shen, D.S., Schropp, R.E.I., Chatham, H., Hollingsworth, R.E., Bhat, P.K. and Xi, J., accepted for publication in Appl. Phys. Lett.Google Scholar
8. Shen, D.S.. Chatham, H. and Bhat, P.K., to be published.Google Scholar