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A Barrier to Trap Filling in CuIn1-xGaxSe2

Published online by Cambridge University Press:  01 February 2011

David L. Young ,
Kannan Ramanathan ,
Miguel Contreras ,
Jehad Abushama  and
Richard S. Crandall
David L. Young
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Kannan Ramanathan
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Miguel Contreras
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Jehad Abushama
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

Voltage pulses of variable length were applied to CuIn1-xGaxSe2/CdS (0 < x < 1) junction solar cells. The resulting transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead they follow a simple electrostatic model based on electrostatic charging of traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B5.24
Copyright
Copyright © Materials Research Society 2003

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