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A Barrier to Trap Filling in CuIn1-xGaxSe2

Published online by Cambridge University Press:  01 February 2011

David L. Young
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Kannan Ramanathan
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Miguel Contreras
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Jehad Abushama
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO 80401
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Abstract

Voltage pulses of variable length were applied to CuIn1-xGaxSe2/CdS (0 < x < 1) junction solar cells. The resulting transient capacitance emission signal was recorded for several minutes. The amplitude of the capacitance emission signal increased linearly with the log of pulse time. These data do not follow the standard model for trap capture and emission of carriers. Instead they follow a simple electrostatic model based on electrostatic charging of traps.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1 Ramanathan, K., et al. Prog. Photovolt: Res. Appl. 11 225230 (2003).Google Scholar
2 Hanna, G., Jasenek, A., Rau, U., and Schock, H. W., Thin Solid Films 387, 7173 (2001).Google Scholar
3 Herberholz, R., Igalson, M., and Schock, H. W., J. Appl. Phys. 83, 318325 (1998).Google Scholar
4 Heath, J. T., Cohen, J. D., Shafaman, W. N., Liao, D. X., and Rockett, A. A., Appl. Phys. Lett. 80, 45404542 (2002).Google Scholar
5 Zhang, S. B., Wei, S.-H., and Zunger, A., Physical Review B 57, 96429656 (1998).Google Scholar
6 Igalson, M. and Zabierowski, P., Thin Solid Films 361-362, 371377 (2000).Google Scholar
7 Nadazdy, V., Yakushev, M., Djebbar, E. H., Hill, A. E., and Tomlinson, R. D., J. Appl. Phys. 84, 43224326 (1998).Google Scholar
8 Rau, U., Schmitt, M., Parisi, J., Riedl, W., and Karg, F., Appl. Phys. Lett. 73, 223225 (1998).Google Scholar
9 Delahoy, A. E., ruppert, A., and Contreras, M., Thin Solid Films 361-362, 140144 (2000).Google Scholar
10 Abushama, J., Johnston, S., Ahrenkiel, R., and Noufi, R., in Deep level transient spectroscopy and capacitance-voltage measurements of Cu(In, Ga)Se2 , New Orleans, LA, 2002 (IEEE), p. 740743.Google Scholar
11 Lang, D. V., in Thermally Stimulated Relaxation in solids, edited by Braunlich, P. (Springer-Verlag, New York, 1979).Google Scholar
12 Lang, D. V., J. Appl. Phys. 45, 30143022 (1974).Google Scholar
13 Crandall, R. S., Journal of Electronic Materials 9, 713726 (1980).Google Scholar
14 Wosinski, T., Morawski, A., and Figielski, T., Appl. Phys. A 30, 233235 (1983).Google Scholar
15 Grillot, P. N., Ringel, S. A., Fitzgerald, E. A., Watson, G. P., and Xie, Y. H., J. Appl. Phys. 77, 32483256 (1995).Google Scholar
16NREL, (1995).Google Scholar
17 Michelson, C. E., Gelatos, A. V., and Cohen, J. D., Appl. Phys. Lett. 47, 412414 (1985).Google Scholar
18 Miller, G. L., Lang, D. V., and Kimerling, L. C., in Annual Review of Materials Science; Vol. 7, edited by Huggins, R. A., Bube, R. H., and Roberts, R. W. (Annual Reviews, INC., Palo Alto, 1977), p. 377.Google Scholar
19 Broniatowski, A. and Bourgoin, J.-C., Physical Review Letters 48, 424427 (1982).Google Scholar
20 Romero, M. J., Ramanathan, K., Contreras, M. A., Al-Jassim, M. M., Abushama, J., and Noufi, R., in Mesoscopic fluctuation in the distribution of electronic defects near the surface layer of Cu(In, Ga)Se2 , Denver, CO, 2003 (U.S. Department of Energy).Google Scholar
21 AbuShama, J. A., Thesis, Colorado School of Mines, Golden, CO 2003.Google Scholar
22 Crandall, R. S., Spring MRS Conferenc, San Francisco, CA, B2.5 (2003).Google Scholar
23 Igalson, M. and Bacewicz, R., in The investigation of deep states in CuInSe2 by means of junction techniques, Amsterdam, Netherlands, 1994, p. 15841587.Google Scholar