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Barrier Height Difference Induced by Surface Terminations for Field Emission from P-doped Diamond

  • Yuki Kudo (a1), Takatoshi Yamada (a2), Hisato Yamaguchi (a3), Tomoaki Masuzawa (a4), Ichitaro Saito (a5), Shin-ichi Shikata (a6), Christoph E. Nebel (a7) and Ken Okano (a8)...

Abstract

In this paper, we measured the field emission properties of reconstructed P-doped diamond under various anode-diamond distances and compared with the oxidized surface. Voltage drops in the vacuum was estimated to be 4.95 and 26.6 V/μm for the reconstructed and the oxidized, respectively. Moreover, we calculated the barrier height ratio between each surface. Our data indicates the changes in electron affinity strongly affect on the field emission properties.

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Keywords

Barrier Height Difference Induced by Surface Terminations for Field Emission from P-doped Diamond

  • Yuki Kudo (a1), Takatoshi Yamada (a2), Hisato Yamaguchi (a3), Tomoaki Masuzawa (a4), Ichitaro Saito (a5), Shin-ichi Shikata (a6), Christoph E. Nebel (a7) and Ken Okano (a8)...

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