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Band Offsets of InAsxP1−X/InP Strained Layer Quantum Wells Grown by Lp-Movpe Using TBAs

Published online by Cambridge University Press:  28 February 2011

M. Beaudoin ,
R.A. Masut ,
L. Isnard ,
P. Desjardins ,
A. Bensaada ,
G. L'Espérance  and
R. Leonelli
M. Beaudoin
Affiliation:
Groupe de recherches en physique et technologie des couches minces (GCM) and Dép. de génie physique, École Polytechnique, C.P. 6079 succ."Centre-Ville", Montréal, Québec. H3C 3A7
R.A. Masut
Affiliation:
Groupe de recherches en physique et technologie des couches minces (GCM) and Dép. de génie physique, École Polytechnique, C.P. 6079 succ."Centre-Ville", Montréal, Québec. H3C 3A7
L. Isnard
Affiliation:
Groupe de recherches en physique et technologie des couches minces (GCM) and Dép. de génie physique, École Polytechnique, C.P. 6079 succ."Centre-Ville", Montréal, Québec. H3C 3A7
P. Desjardins
Affiliation:
Groupe de recherches en physique et technologie des couches minces (GCM) and Dép. de génie physique, École Polytechnique, C.P. 6079 succ."Centre-Ville", Montréal, Québec. H3C 3A7
A. Bensaada
Affiliation:
Groupe de recherches en physique et technologie des couches minces (GCM) and Dép. de génie physique, École Polytechnique, C.P. 6079 succ."Centre-Ville", Montréal, Québec. H3C 3A7
G. L'Espérance
Affiliation:
Centre de caractérisation microscopique des matériaux (CM)2 and Dép. de métallurgie et de génie des matériaux, École Polytechnique, C.P. 6079 succ."Centre-Ville", Montréal, Québec. H3C 3A7
R. Leonelli
Affiliation:
Groupe de recherches en physique et technologie des couches minces (GCM) and Dép. de physique, Université de Montréal, C.P. 6128 succ."Centre-Ville", Montréal, Québec. H3C 3J7
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Abstract

Low temperature optical absorption spectra are presented for a series of InAsxP1-x/InP strained layer multiple quantum well structures (0 < x = 0.35) grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE) using trimethylindium (TMIn), tertiarybutylarsine (TBAs) and phosphine as precursors. The well widths and compositions in these structures are determined from high resolution x-ray diffraction and transmission electron microscopy. The absorption spectra are then analyzed by fitting the excitonic peak energy position with transition energies determined from a solution to the Schrödinger equation. We used the envelope function formalism with the Kane bands as the basis wavefunctions and included corrections for non parabolicity. From these fits and elasticity theory, both the bandgap of unstrained InAsxP1-x and the band offsets of these heterostructures are deduced self-consistently. The conduction band offsets are found between 72% and 75% of the total strained bandgap differences.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 1005
Copyright
Copyright © Materials Research Society 1995

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References

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