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Band gap and interface engineering of wide gap Cu-containing chalcopyrite absorbers by dry (In,Ga)-S surface treatments

Published online by Cambridge University Press:  01 February 2011

David Fuertes Marrón ,
Sebastian Lehmann ,
Thomas Schedel-Niedrig ,
Joachim Klaer ,
Reiner Klenk  and
Martha Ch. Lux-Steiner
David Fuertes Marrón
Affiliation:
Solar Energy Department, Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Sebastian Lehmann
Affiliation:
Solar Energy Department, Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Thomas Schedel-Niedrig
Affiliation:
Solar Energy Department, Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Joachim Klaer
Affiliation:
Solar Energy Department, Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Reiner Klenk
Affiliation:
Solar Energy Department, Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
Martha Ch. Lux-Steiner
Affiliation:
Solar Energy Department, Hahn-Meitner Institut, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

Device-grade CuGaSe2 (CGSe) and CuInS2 (CIS) thin films for photovoltaic applications have been subjected to dry surface treatments based on In-S and Ga-S by means of chemical vapor deposition (CVD), carried out in an open-tube system. Film properties have been monitored from time and temperature processing series. Improved PV performance has been demonstrated from devices based on treated CGSe compared to those based on reference samples. Numerical simulations have been performed, pointing out the conditions such surface treatments should fulfil in order to improve the performance of devices based on wide gap absorbers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F16.2
Copyright
Copyright © Materials Research Society 2005

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