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Band Alignment of Si1-xGex And Si1-x-y.GexCy Quantum Wells On Si (001)

  • N. L. Rowell (a1), R. L. Williams (a1), G. C. Aers (a1), H. Lafontaine (a2), D. C. Houghton (a2), K. Brunner (a3), K. Eberl (a3), O. Schmidt (a3) and W. Winter (a3)...

Abstract

Recent low-temperature photoluminescence (PL) studies will be discussed for coherent Si1-xGex. and Si1-xGexCy alloy multiple quantum wells on Si (001) substrates grown by either ultra-high vacuum chemical vapour deposition or solid source molecular beam epitaxy. An in-plane applied-stress technique will be described which removes systematically band edge degeneracies revealing the lower, PL-active CB. Applied-stress data taken with this technique at ultra-low excitation intensity proved intrinsic type II CB alignment in SiGe on Si (001). Apparent type I alignment observed at higher intensity will also be discussed. New applied stress PL results are presented for Si1-x-yGexCy quantum wells under various grown-in stress condition

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Band Alignment of Si1-xGex And Si1-x-y.GexCy Quantum Wells On Si (001)

  • N. L. Rowell (a1), R. L. Williams (a1), G. C. Aers (a1), H. Lafontaine (a2), D. C. Houghton (a2), K. Brunner (a3), K. Eberl (a3), O. Schmidt (a3) and W. Winter (a3)...

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