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Band alignment at amorphous/crystalline silicon hetero-interfaces

  • L. Korte (a1), T. F. Schulze (a1), C. Leendertz (a1), M. Schmidt (a1) and B. Rech (a1)...

Abstract

We present an investigation of the band offsets in amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si) using low energy photoelectron spectroscopy, ellipsometry and surface photovoltage data. For a variation of deposition conditions that lead to changes in hydrogen content and the thereby the a-Si:H band gap by ∼180 meV, we find that mainly the conduction band offset ΔE V varies, while ΔE C stays constant within experimental error. This result can be understood in the framework of charge neutrality (CNL) band lineup theory.

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Keywords

Band alignment at amorphous/crystalline silicon hetero-interfaces

  • L. Korte (a1), T. F. Schulze (a1), C. Leendertz (a1), M. Schmidt (a1) and B. Rech (a1)...

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