Skip to main content Accessibility help
×
Home

Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/AlxGa1−x As Heterostructure

  • Wei Yi (a1), Ian Appelbaum (a1), Kasey J. Russell (a1), Venkatesh Narayanamurti (a1), Micah P. Hanson (a2) and Arthur C. Gossard (a2)...

Abstract

Ballistic electron emission luminescence (BEEL) is a further development of ballistic electron emission microscopy (BEEM) combining three-terminal hot electron injection and interband radiative recombination in direct-gap semiconductor materials. By using a planar tunnel-junction emitter rather than a STM tip, a spectrographic analysis of the induced electroluminescence can be performed with the help of much higher current injection level. We demonstrate the operational principle of BEEL in a GaAs/AlxGa1−x As heterostructure with a layer of InAs quantum dots (QDs) as the optical active layer. The wavelength-resolved BEEL spectra from planar tunnel-junction devices disclose the QD luminescence as a peak near 1.34 eV accompanied with a linear quantum-confined Stark shift. At higher collector voltage, luminescence from bulk states of GaAs peaked at 1.48 eV is observed. The spectrally integrated BEEL intensity as a function of collector voltage fits well with the results from STM tip injection, which is measured in a single-photon-counting mode. Measurement of ballistic electron current spectroscopy is made possible by freezing out the thermionic leakage current at low temperatures. Our results indicate that it is feasible to simultaneously acquire topographic, electronic and photonic information of buried light-emitting semiconductor heterostructures.

Copyright

References

Hide All
1. Kaiser, W. J. and Bell, L. D., Phys. Rev. Lett. 60, 1406 (1988).
2. For reviews, see Prietsch, M., Phys. Rep. 253, 163 (1995);
Narayanamurti, V. and Kozhevnikov, M., Phys. Rep. 349, 447 (2001);
Smoliner, J., Rakoczy, D. and Kast, M, Rep. Prog. Phys. 67, 1863 (2004).
3. Fafard, S., Hinzer, K., Raymond, S., Dion, M., McCaffrey, J., Feng, Y., and Charbonneau, S., Science 274, 1350 (1996).
4. Russell, K. J., Appelbaum, I., Temkin, H., Perry, C. H., Narayanamurti, V., Hanson, M. P., and Gossard, A. C., Appl. Phys. Lett. 82, 2960 (2003).
5. Appelbaum, I., Russell, K. J., Narayanamurti, V., Monsma, D. J., Marcus, C. M., Hanson, M. P., Gossard, A. C., Temkin, H., and Perry, C. H., Appl. Phys. Lett. 82, 4498 (2003).
6. Appelbaum, I., Russell, K. J., Kozhevnikov, M., Narayanamurti, V., Hanson, M. P., and Gossard, A. C., Appl. Phys. Lett. 84, 547 (2004).
7. Appelbaum, I., Russell, K. J., Monsma, D. J., Narayanamurti, V., Marcus, C. M., Hanson, M. P., and Gossard, A. C., Appl. Phys. Lett. 83, 4571 (2003).
8. García, J. M., Mankad, T., Holtz, P. O., Wellman, P. J., and Petroff, P. M., Appl. Phys. Lett. 72, 3172 (1998).
9. Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H., and Burrus, C. A., Phys. Rev. Lett. 53, 2173 (1984).
10. Hsu, T. M., Chang, W.-H., Huang, C. C., Yeh, N. T., and Chyi, J.-I., Appl. Phys. Lett. 78, 1760 (2001).

Related content

Powered by UNSILO

Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/AlxGa1−x As Heterostructure

  • Wei Yi (a1), Ian Appelbaum (a1), Kasey J. Russell (a1), Venkatesh Narayanamurti (a1), Micah P. Hanson (a2) and Arthur C. Gossard (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.