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Backside Sims Study Of Ge/Pd Non-Alloyed Ohmic Contacts On InGaAs

Published online by Cambridge University Press:  21 February 2011

S.A. Schwarz ,
C.J. Pahnstrom ,
R. Bhat ,
M. Koza ,
L.C. Wang  and
M.H. Park
S.A. Schwarz
Affiliation:
Queens College, Dept. of Physics, Flushing, NY 11367
C.J. Pahnstrom
Affiliation:
Univ. of Minnesota, Dept. of Chem. Eng. and Mat. Sci., Minneapolis, MN 55455
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701
M. Koza
Affiliation:
Bellcore, Red Bank, NJ 07701
L.C. Wang
Affiliation:
Texas A&M Univ., Dept. of Elec. Eng., College Station, TX 77843
M.H. Park
Affiliation:
Texas A&M Univ., Dept. of Elec. Eng., College Station, TX 77843
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Abstract

Backside secondary ion mass spectrometry (SIMS) is employed to examine the Ge/Pd non-alloyed ohmic contact on InGaAs. 130 nm Ge/ 50 nm Pd contacts were deposited on an InP/InGaAs marker layer structure. The contacts were annealed for various times at 200°C and 325°C. Samples were mechanically and chemically thinned to facilitate sputter profiling from the backside, thereby avoiding problems such as roughening or non-uniformity of the metallic layers. Subsequent to depth profiling, additional anneals were performed on the thinned samples, and the samples were reexamined. Extensive reaction of Pd with InGaAs is observed on deposition. Little additional reaction occurs at 200°C. At 325°C, Pd is reclaimed from the reacted surface region, forming PdGe with some excess Ge at the interface. In-diffiision of Pd and Ge into InGaAs is observed at longer annealing times. The results are contrasted with prior studies on GaAs, InP, and InGaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 471
Copyright
Copyright © Materials Research Society 1995

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References

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