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Back-Channel Surface Modifications for a-Si:H Thin Film Transistors, TFTs, by Exposure to Plasma Excited N2O

Published online by Cambridge University Press:  21 February 2011

S.S. He ,
D.J. Stephens  and
G. Lucovsky
S.S. He
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical Engineering, NC State University, Raleigh, NC 27695-8202
D.J. Stephens
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical Engineering, NC State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical Engineering, NC State University, Raleigh, NC 27695-8202
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Abstract

We have studied different surface treatments for the back side of the channel of bottom gate a-Si:H TFTs. Two sets of different (i) channel layer thicknesses, and (ii) gate dielectric silicon nitride compositions were studied. The back channel Si-surfaces were either (i) exposed to products from an N2O plasma, or (ii) plasma oxidized. Comparisons of these back channel passivation methods indicated that relative to oxidized surfaces, the plasma N2O process, which created an oxynitride surface layer, (i) reduced the threshold voltage, (ii) decreased the sub-threshold slope (defined as V/decade of current increase) of the I-V characteristic, and (iii) increased the transconductance, or equivalently, the effective channel mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 489
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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