Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-19T20:50:39.476Z Has data issue: false hasContentIssue false

B(1−x)Nx Alloy Films Prepared by Ion Beam Assisted Deposition

Published online by Cambridge University Press:  25 February 2011

C. A. Carosella
Affiliation:
Naval Research Laboratory, Code 4670, Washington DC 20375-5000
G. K. Hubler
Affiliation:
Naval Research Laboratory, Code 4670, Washington DC 20375-5000
D. Van Vechten
Affiliation:
Sachs Freeman Associates at the Naval Research Laboratory
E. P. Donovan
Affiliation:
Naval Research Laboratory, Code 4670, Washington DC 20375-5000
Get access

Abstract

We have produced alloy films of B(1−x)Nx (x:0 to 0.5) via ion beam assisted deposition (IBAD). Rutherford backscattering spectroscopy (RBS) measurements show that the stoichiometric films are achieved with a nitrogen to boron atom arrival rate of N/B = 2.55. The film N/B ratio for all measured compositions is fit with a model that predicts that the nitrogen sticking coefficient is 0.36. Measurements of B(1−x)Nx film thicknesses with a profilometer confirm the value of this sticking coefficient. The BN film is transparent and has an refractive index that varies between 1.90 and 1.77 in the range 400 nm to 3100 nm. The refractive index data can be fit with the Sellmeier equation. Films 500 run thick with N/B less than 0.6 appear metallic; the index decreases linearly with increasing nitrogen content. The films have two broad absorption peaks, centered at 750 cm−1 and 1370 cm−1 that correspond to BN vibrations. The characteristics of the bands suggest that the films are amorphous or a microcrystalline hexagonal phase. The Knoop microhardness of the films generally decrease with increasing N content. Stoichiometric films have a microhardness of Hk = 20 GPa, measured with a 25 gm load.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nakamura, K., J. Electrochem. Soc. 33, 11201123 (1986).10.1149/1.2108797CrossRefGoogle Scholar
2. Andoh, Y., Ogata, K., Suzsuki, Y., Kamijo, E., Satou, M. and Fujimoto, F. Nuclear Instr. and Methods B19/20, 787790 (1987)10.1016/S0168-583X(87)80158-1Google Scholar
3. Satou, M., Yamaguchi, K., Andoh, Y., Suzsuki, Y., Matsuda, K. and Fujimoto, F. Nuclear Instr. and Methods B7/8, 910914 (1985).10.1016/0168-583X(85)90493-8Google Scholar
4. Van Vechten, D., Hubler, G.K. and Donovan, E.P., J. Vacuum Sci. and Tech. A6, 1934 (1988).10.1116/1.575252Google Scholar
5. Donovan, E.P., Carosella, C.A. and Van Vechten, D., MRS Symposium A (November 1988).Google Scholar
6. Doolittle, L.R., Nucl. Instru. Methods B9, 344 (1983).Google Scholar
7. Hubler, G.K., J. Mat. Science and Engin. (Proceedings of the 1988 SM2 IB Conf.) To be published (1989).Google Scholar
8. Biersack, J.P. and Haggmark, L.G., Nucl. Instru. Methods 174, 257 (1980).10.1016/0029-554X(80)90440-1Google Scholar
9. Hecht, E. and Zajak, A. in Optics, Addison Wesley, Reading, MA (1979).Google Scholar
10. Yuzuriha, T.H. and Hess, D.W., Thin Film Solids 40, 199207 (1986).10.1016/0040-6090(86)90263-4CrossRefGoogle Scholar
11. Ivanko, A.A. in Handbook of Hardness Data, NTIS, Springfield, VA (1971).Google Scholar
12. Davies, C.A., Downey, J.R., Frarip, D.J., McDonald, R.A. and Syverd, A.N. J. Phys. Chemical Reference Data 14 Suppl #1, (1985) [JANAS Thermochemical Tables, 3rd Edition].Google Scholar
13. Sainty, W.G., Martin, P.J., Netterfield, R.P., McKenzie, D.R., Cockayne, D.J.H. and Dwarte, D.M., J. Appl. Phys. 64(8), 39803986 (1988).10.1063/1.341357Google Scholar