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B Diffusion in Low Energy B/BF2 Implants with Pre-Amorphization of Different Species

  • Hong-Jyh Li (a1), Todd Rhoad (a1), Peter Zeitzoff (a1), Robin Tichy (a1), Larry Larson (a1) and Sanjay Banerjee (a2)...

Abstract

The formation of an amorphous layer is needed to prevent channeling effect of B in the subsequent implant and hence, shallower as-implanted and annealed profiles could be expected. B diffusion in the pre-amorphization (PAI) Si has been studied extensively by many research groups and the diffusion has been explained by the interaction of B and defects generated by the PAI and B implant processes. In our previous study, we found that B diffusion can also be affected by the immobile B clustering caused by the incorporated species and therefore, B diffusion in the PAI Si should be expected to be different with different PAI species due to their different effect on the B clustering. In this paper, we reported different B diffusion behavior in bulk Si with respective to different PAI species. The species include GeF2, Ge, F, BF2, and In and the immobile B clustering plays an important role in the B diffusion reduction.

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B Diffusion in Low Energy B/BF2 Implants with Pre-Amorphization of Different Species

  • Hong-Jyh Li (a1), Todd Rhoad (a1), Peter Zeitzoff (a1), Robin Tichy (a1), Larry Larson (a1) and Sanjay Banerjee (a2)...

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