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Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon

Published online by Cambridge University Press:  21 March 2011

A. Claverie ,
B. Colombeau ,
F. Cristiano ,
A. Altibelli  and
C. Bonafos
A. Claverie
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse Cedex 4
B. Colombeau
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse Cedex 4
F. Cristiano
Affiliation:
LAAS/CNRS, 7 Avenue du Colonel Roche, F-31077 Toulouse Cedex
A. Altibelli
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse Cedex 4
C. Bonafos
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse Cedex 4
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Abstract

We have implemented an atomistic simulation of the Ostwald ripening of extrinsic defects (clusters, {113}'s and dislocation loops) which occurs during annealing of ion implanted silicon. Our model describes the concomitant time evolution of the defects and of the supersaturation of Si interstitial atoms in the region. It accounts for the capture and emission of these interstitials to and from extrinsic defects (defined by their formation energy) of sizes up to thousands of atoms and includes a loss term due to the interstitial flux to the surface. This model reproduces well the dissolution of {113} defects in Si implanted wafers. We have subsequently studied the characteristics of TED in the case of B implantation at low and ultra low energy. In such cases, the distance between the defect layer and the surface plays a crucial role in determining the TED decay time. The simulations show that defect dissolution occurs earlier and for smaller sizes in the ultra-low energy regime. Under such conditions, TED is mostly characterized by its “pulse” component which takes place at the very beginning of the anneal, probably during the ramping up. In summary, we have shown that the physical modelling of the formation and of the growth of extrinsic defects leads to a correct prediction of the “source term” of Si interstitials and at the origin of TED.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J9.4
Copyright
Copyright © Materials Research Society 2001

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References

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