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Atomistic Modeling of Complex Silicon Processing Scenarios

Published online by Cambridge University Press:  17 March 2011

Martin Jaraiz ,
Pedro Castrillo ,
Ruth Pinacho ,
Lourdes Pelaz ,
Juan Barbolla ,
George H. Gilmer  and
Conor S. Rafferty
Martin Jaraiz
Affiliation:
Dept. de Electronica, ETSI Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain
Pedro Castrillo
Affiliation:
Dept. de Electronica, ETSI Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain
Ruth Pinacho
Affiliation:
Dept. de Electronica, ETSI Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain
Lourdes Pelaz
Affiliation:
Dept. de Electronica, ETSI Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain
Juan Barbolla
Affiliation:
Dept. de Electronica, ETSI Telecomunicacion, University of Valladolid, 47011 Valladolid, Spain
George H. Gilmer
Affiliation:
Lucent Technologies Bell Labs, 600 Mountain Ave., Murray Hill, NJ 07974, U.S.A
Conor S. Rafferty
Affiliation:
Lucent Technologies Bell Labs, 600 Mountain Ave., Murray Hill, NJ 07974, U.S.A
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Abstract

The level of sophistication reached by today's Si device fabrication technologies has called for new modeling and simulation schemes, capable of handling the wide variety of interaction mechanisms that govern the complex phenomena that can occur at the atomic level. The kinetic Monte Carlo (KMC) technique seems particularly apt for this task. It takes as input basic materials parameters, derived from ab-initio calculations or from experiments, and is capable of carrying out a detailed simulation up to the dimensions and time scales of current ULSI Si device manufacture. In addition, it can accommodate and efficiently simulate complex interactions between multiple dopant and defect types. We explain the approach and show examples of application in both materials processing and device fabrication. Finally, we present the use of some artificial intelligence techniques (namely, genetic algorithms) that look most promising as methodologies that can easy and efficiently be employed to build the extensive KMC parameter database.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B11.1
Copyright
Copyright © Materials Research Society 2000

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