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Atomistic Calculations of Dopant Binding Energies in ZnGeP2

  • Ravindra Pandey (a1), Melvin C. Ohmer (a2), A. Costales (a3) and J. M. Recio (a3)

Abstract

Atomistic model has been applied to study various cation dopants, namely Cu, Ag, B, Al, Ga and In in ZnGeP2. The pairwise interatomic potential terms representing the interaction of dopants with the host lattice ions are derived using first principle methods. Defect calculations based on Mott-Littleton methodology predict small binding energies for Cu and Ag substituting Zn in the lattice which are in agreement with the available experimental data. The group III dopants (i.e. B, Al, Ga and In) at the Ge site are predicted to have large binding energies for a hole except B which shows a distinct behavior. This may be due to large mismatch in atomic sizes of B and Ge. At the Zn site, the calculated binding energies of the group III dopants place donor levels in the middle of the band gap.

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Atomistic Calculations of Dopant Binding Energies in ZnGeP2

  • Ravindra Pandey (a1), Melvin C. Ohmer (a2), A. Costales (a3) and J. M. Recio (a3)

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