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Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy

  • Kenta Arima (a1), Hideyuki Hara (a2), Yasuhisa Sano (a3), Keita Yagi (a4), Ryota Okamoto (a5), Junji Murata (a6), Hidekazu Mimura (a7) and Kazuto Yamauchi (a8)...


Scanning tunneling microscopy (STM) observations are performed on 4H-SiC(0001) surfaces after wet-chemical preparation steps including HF treatments.1×1 structures are formed on a terrace together with other local structures. Their atomic images are investigated in conjunction with low-energy electron diffraction and electron spectroscopy for chemical analysis. It is suggested that each bright dot forming the 1×1 phase corresponds to an OH-terminated Si atom.



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