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Atomic Structure of Interfaces in Epitaxial NiSi2 on (001) Silicon

Published online by Cambridge University Press:  25 February 2011

W.J. Chen ,
F.R. Chen  and
L.J. Chen
W.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
F.R. Chen
Affiliation:
HRTEM Lab., Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

High resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of NiSi2 /(001)Si interface. Previous HRTEM result suggested that Ni atoms in the boundary core are six-fold coordinated and Si atoms are everywhere tetrahedrally coordinated. In this work, high resolution imaging technique and computer image simulation were used to study the atomic structure of NiSi2 /(001)Si interfaces and a new interface structure was found. For the new interface structure, Ni and Si atoms are also six-fold and tetrahedrally coordinated, respectively, with an extra layer of fourfold planar bonded Si atoms present at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 273
Copyright
Copyright © Materials Research Society 1992

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References

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