Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-19T03:10:19.942Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Scale Control of Si(001) Surface by Wet-Chemical Treatment

Published online by Cambridge University Press:  21 February 2011

Yukinori Morita  and
Hiroshi Tokumoto
Yukinori Morita
Affiliation:
Joint Research Center for Atom Technology (JRCAT) National Institute for Advanced Interdisciplinary Research (NAIR) 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan.
Hiroshi Tokumoto
Affiliation:
Joint Research Center for Atom Technology (JRCAT) National Institute for Advanced Interdisciplinary Research (NAIR) 1-1-4 Higashi, Tsukuba, Ibaraki 305, Japan.
Get access

Abstract

STM observation of the wet-chemical treated Si(001) surface was carried out. On the surface treated by 1%-HF solution (pH=2), the STM images were always rough and hardly exhibited the atomic feature. The STM images on the surface treated by HCl:HF=19:1 solution (pH<1) after 1%-HF dipping were also rough in a macroscopic scale but they occasionally shown atomlike corrugation in a magnified scale. The atomlike corrugation tends to align toward [110] directions which may reflect the ordered structure on Si(001) surface. This result indicates that in the case of etching by the HCl:HF=19:1 solution, the microscopic roughness on Si(001) surface tends to decrease, which might be explained by the steric hindrance effect during extremely slow etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 293
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 See, for example, Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing, ed. Nemanich, R.J., Helms, C.R., Hirose, M. and Rudloff, G.W., (Materials Research Society Symposium Proceedings, MRS, Pittsburgh, 1992), Vol. 259, and references therein.Google Scholar
2 Higashi, G.S., Chabal, Y.J., Trucks, G.W. and Raghavachari, K., Appl. Phys. Lett. 56, 656 (1990).CrossRefGoogle Scholar
3 Becker, R.S., Higashi, G.S., Chabal, YJ. and Becker, A.J., Phys. Rev. Lett. 65, 1917 (1990).Google Scholar
4 Morita, Y., Miki, K. and Tokumoto, H., Appl. Phys. Lett. 59, 1347 (1991); Ultramicroscopy. 42-44, 922 (1992); J. J. Appl. Phys. 30, 3570 (1991); Appl Surf Sci. 60/61, 466 (1992).Google Scholar
5 Tokumoto, H., Morita, Y. and Miki, K., Mat. Res. Soc. Symp. Proc. 259, 409 (1992).Google Scholar
6 Morita, Y. and Tokumoto, H., Mat. Res. Soc. Symp. Proc. 315, 491 (1993).Google Scholar
7 Watanabe, S., Nakayama, N. and Ito, T., Appl. Phys. Lett. 59, 1458 (1991).CrossRefGoogle Scholar
8 Nakagawa, Y., Ishitani, A., Takahagi, T., Kuroda, H., Tokumoto, H., Ono, M. and Kajimura, K., J. Vac. Sci. Technol. A 8, 262 (1990).Google Scholar
9 Neuwald, U., Hessel, H.E., Feltz, A., Memmert, U. and Behm, R.J., Surf. Sci. Lett. 296, L8 (1993).Google Scholar