Skip to main content Accessibility help
×
Home

Atomic Profiles and Electrical Characteristics of Very High Energy (8–20 MeV) Si Implants in GaAs

  • Phillip E. Thompson (a1), Harry B. Dietrich (a1), James M. Eridon (a1) and Thomas Gresko (a2)

Abstract

High energy Si implantation into GaAs is of interest for the fabrication of fully implanted, monolithic microwave integrated circuits. Atomic concentration profiles of 8, 12, 16, and 20 MeV Si have been measured using SIMS. The range and shape parameters have been determined for each energy. The theoretical atomic concentration profile for 12 MeV Si calculated using TRIM-88 corresponded to the SIMS experimental profile. No redistribution of the Si was observed for either furnace anneal, 825° C, 15 min, or rapid thermal anneal, 1000°C, 10 s. The activation of the Si improved when co-implanted with S. The co-implanted carrier concentration profiles did not show dopant diffusion. Peak carrier concentration of 2×1018/cm3 was obtained with a Si and S dose of 1.5×104/cm2, each.

Copyright

References

Hide All
1. Thompson, P. E., Wilson, R. G., Ingram, D. C., and Pronko, P. P. in Materials Modification and Growth Using Ion Beams, edited by Gibson, U., Pronko, P. P., and White, A. E. (Mater Res. Soc. Proc. 93 Pittsburgh, PA 1987) pp. 7377.
2. Thompson, P. E., Wilson, R. G., Ingram, D. C., and Pronko, P. P., accepted for publication in the J. Appl. Phys.
3. Thompson, P. E., Dietrich, H. B., and Ingram, D. C., Nucl. Instr. and Meth. B6, 287 (1985)
4. Thompson, P. E., Dietrich, H. B., Spencer, M., and Ingram, D. C., SPIE 530, 35 (1985).
5. Krowne, C. M. and Thompson, P. E., Solid State-Electron. 30. 497 (1987).
6. Thompson, P. E., Dietrich, H. B., Anand, Y., Higgins, V., and Hillson, J., Electronics Letters 23, 725 (1987).
7. Gibbons, J. F. and Mylroie, S., Appl. Phys. Lett. 22, 568 (1973).
8. Hofker, W. K., Phillips Research Reports Supplements, 8, 41 (1975).
9. Hofker, W. K., Oosthoek, D. P., Koeman, N. J.,, and Grefte, H. A. M. De, Rad. Effects 24, 223 (1975).
10. Wilson, R. G., Rad. Effects 46, 141 (1980).
11. Ziegler, J. F., Biersack, J. P., and Littmark, U., The Stopping Power and Range of Ions in Solids (Pergammon Press Inc., New York, 1985).
12. Pearton, S. J. and Cummings, K. D., J. Appl. Phys. 58(14), 1500 (1985).
13. Wilson, R. G. and Jamba, D. M., Appl. Phys. Lett. 39, 715 (1981).
14. Bhattacharya, R. S., Pronko, P. P., and Ling, S. C., Appl. Phys. Lett. 42 42(10)., 880 (1983).

Atomic Profiles and Electrical Characteristics of Very High Energy (8–20 MeV) Si Implants in GaAs

  • Phillip E. Thompson (a1), Harry B. Dietrich (a1), James M. Eridon (a1) and Thomas Gresko (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed